CTD10N033 Datasheet and Replacement
Type Designator: CTD10N033
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO-252
CTD10N033 substitution
CTD10N033 Datasheet (PDF)
ctd10n033.pdf
nvertCTD10N033Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctd10n100.pdf
nvertCTD10N100Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application LED TV Backlight Module LCD Application SystemDevice
ctd10p650.pdf
nvertCTD10P650Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
Datasheet: CTD04N5P5 , CTD04N7P5 , CTD06N017 , CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , RU7088R , CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 .
History: JCS86N25WT | FIR75N075G | DMP2004K | AP2764AI | TTD120N03AT | P3506DTF | TTP100N04AT
Keywords - CTD10N033 MOSFET datasheet
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History: JCS86N25WT | FIR75N075G | DMP2004K | AP2764AI | TTD120N03AT | P3506DTF | TTP100N04AT
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