CTD10N033 Datasheet and Replacement
Type Designator: CTD10N033
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO-252
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CTD10N033 Datasheet (PDF)
ctd10n033.pdf
nvertCTD10N033Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctd10n100.pdf
nvertCTD10N100Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application LED TV Backlight Module LCD Application SystemDevice
ctd10p650.pdf
nvertCTD10P650Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HGD750N15M | IRFIBC20G | APL602J | BSS214NW | SSF9N90A | TK3A60DA | HAF1002
Keywords - CTD10N033 MOSFET datasheet
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History: HGD750N15M | IRFIBC20G | APL602J | BSS214NW | SSF9N90A | TK3A60DA | HAF1002
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