CTP06N6P8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTP06N6P8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 158 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 115 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 87 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 332 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0068 Ohm
Package: TO-220
CTP06N6P8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTP06N6P8 Datasheet (PDF)
0.1. ctp06n6p8.pdf 
Size:819K _convert
nvertCTP06N6P8Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTP06N6P8 TO-220 CTP06N6P8Absolute Maximum Ra
8.1. ctb06n005 ctp06n005.pdf Size:661K _convert
nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005
8.2. ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf Size:823K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
