CTP06N6P8 Datasheet and Replacement
Type Designator: CTP06N6P8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 332 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-220
CTP06N6P8 substitution
CTP06N6P8 Datasheet (PDF)
ctp06n6p8.pdf

nvertCTP06N6P8Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTP06N6P8 TO-220 CTP06N6P8Absolute Maximum Ra
ctb06n005 ctp06n005.pdf

nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005
ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf
Datasheet: CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , HY1906P , CTP10N066 , CTP10P095 , CTQ06N085 , CTS03P015 , CTS03PP055 , CTU03N8P5 , CTU10P060 , CTU20N170 .
History: SUP90N08-4M8P
Keywords - CTP06N6P8 MOSFET datasheet
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History: SUP90N08-4M8P



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