All MOSFET. CJAC100P03 Datasheet

 

CJAC100P03 Datasheet and Replacement


   Type Designator: CJAC100P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 985 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: PDFNWB5X6-8L
 

 CJAC100P03 substitution

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CJAC100P03 Datasheet (PDF)

 ..1. Size:2466K  1
 cjac100p03.pdf pdf_icon

CJAC100P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

 ..2. Size:2466K  jiangsu
 cjac100p03.pdf pdf_icon

CJAC100P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

 7.1. Size:1763K  1
 cjac100sn08u.pdf pdf_icon

CJAC100P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr

 7.2. Size:3049K  jiangsu
 cjac100sn08.pdf pdf_icon

CJAC100P03

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.9m@10V80V100A4.3m@4.5VDESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte

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Datasheet: CJAB25P03 , CJAB25SN06 , CJAB35P03 , CJAB40N03 , CJAB40SN10 , CJAB55N03 , CJAB60N03 , CJAC0410 , IRF630 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 , CJAC110SN10 , CJAC13TH06 , CJAC150N03 , CJAC20N03 .

History: IPAN60R180P7S

Keywords - CJAC100P03 MOSFET datasheet

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 CJAC100P03 equivalent finder
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