CJAC10H02 Datasheet. Specs and Replacement

Type Designator: CJAC10H02  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: PDFNWB5X6-8L

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CJAC10H02 datasheet

 ..1. Size:5128K  1
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CJAC10H02

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE... See More ⇒

 ..2. Size:5128K  jiangsu
 cjac10h02.pdf pdf_icon

CJAC10H02

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE... See More ⇒

 8.1. Size:1763K  1
 cjac100sn08u.pdf pdf_icon

CJAC10H02

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L-B 80 V 100A 3.0m @10V DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, pr... See More ⇒

 8.2. Size:2466K  1
 cjac100p03.pdf pdf_icon

CJAC10H02

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU... See More ⇒

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Detailed specifications: CJAB35P03, CJAB40N03, CJAB40SN10, CJAB55N03, CJAB60N03, CJAC0410, CJAC100P03, CJAC100SN08, IRFP250N, CJAC10TH10, CJAC110N03, CJAC110SN10, CJAC13TH06, CJAC150N03, CJAC20N03, CJAC20N10, CJAC40N04

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