CJAC10H02 Specs and Replacement
Type Designator: CJAC10H02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: PDFNWB5X6-8L
CJAC10H02 substitution
CJAC10H02 datasheet
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE... See More ⇒
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE... See More ⇒
cjac100sn08u.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L-B 80 V 100A 3.0m @10V DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, pr... See More ⇒
cjac100p03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU... See More ⇒
Detailed specifications: CJAB35P03 , CJAB40N03 , CJAB40SN10 , CJAB55N03 , CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , IRFP250N , CJAC10TH10 , CJAC110N03 , CJAC110SN10 , CJAC13TH06 , CJAC150N03 , CJAC20N03 , CJAC20N10 , CJAC40N04 .
Keywords - CJAC10H02 MOSFET specs
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