CJAC150N03
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJAC150N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 130
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 60
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 780
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002
Ohm
Package: PDFNWB5X6-8L
CJAC150N03
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJAC150N03
Datasheet (PDF)
..1. Size:4609K 1
cjac150n03.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.6m@10V30 V150A2.1m@4.5VDESCRIPTION 15 FEATURES
..2. Size:4609K jiangsu
cjac150n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.6m@10V30 V150A2.1m@4.5VDESCRIPTION 15 FEATURES
9.1. Size:2395K 1
cjac110sn10a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(onTYP ID 3.4m@10V100V 110A4.5m@4.5VDESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
9.2. Size:1763K 1
cjac100sn08u.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr
9.3. Size:2101K 1
cjac110n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES
9.4. Size:1662K 1
cjac110sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig
9.5. Size:2466K 1
cjac100p03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU
9.6. Size:1216K 1
cjac13th06.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFNWB56-8L 2.2m@10V60V 130A3.0m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE
9.7. Size:1073K 1
cjac10th10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP
9.8. Size:5128K 1
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE
9.9. Size:2101K jiangsu
cjac110n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES
9.10. Size:1662K jiangsu
cjac110sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig
9.11. Size:2466K jiangsu
cjac100p03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU
9.12. Size:3049K jiangsu
cjac100sn08.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.9m@10V80V100A4.3m@4.5VDESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte
9.13. Size:1292K jiangsu
cjac13th06.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 3m@10V60V 130A4.5m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
9.14. Size:1073K jiangsu
cjac10th10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP
9.15. Size:5128K jiangsu
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE
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