SSH60N10 Specs and Replacement
Type Designator: SSH60N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 280 nS
Cossⓘ - Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO3P
SSH60N10 substitution
- MOSFET ⓘ Cross-Reference Search
SSH60N10 datasheet
Detailed specifications: SSH4N70, SSH4N70A, SSH4N80AS, SSH4N90AS, SSH5N80A, SSH5N90A, SSH60N06, SSH60N06A, IRFP260, SSH60N10A, SSH6N55, SSH6N60, SSH6N70, SSH6N70A, SSH6N80AS, SSH6N90A, SSH70N10A
Keywords - SSH60N10 MOSFET specs
SSH60N10 cross reference
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