CJK3401A MOSFET Datasheet: P-Ch, 30V, 4.2A. Full specification with pinout and replacement list

CJK3401A Specs and Replacement

   Type Designator: CJK3401A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.5(max) nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23

CJK3401A substitution

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CJK3401A datasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m @-10V 60 -30V 70 m -4.2A @-4.5V m @-2.5V 85 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi... See More ⇒

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 50m @-10V -30V -4.2A 60 m @-4.5V m @-2.5V 85 FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum ... See More ⇒

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m @10V 30V 38m @4.5V 5.8A 45m @2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r... See More ⇒

8.2. Size:1664K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 27m @10V 30V 32m @4.5V 5.8A 48m @2.5V 1. GATE 2. SOURCE 3. DRAIN D FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resist... See More ⇒