All MOSFET. CJK3401A Datasheet

 

CJK3401A Datasheet and Replacement


   Type Designator: CJK3401A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5(max) nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23
 

 CJK3401A substitution

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CJK3401A Datasheet (PDF)

 ..1. Size:780K  jiangsu
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CJK3401A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi

 0.1. Size:1634K  jiangsu
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CJK3401A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum

 8.1. Size:715K  jiangsu
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CJK3401A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m@10V30V 38m@4.5V5.8A45m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r

 8.2. Size:1664K  jiangsu
 cjk3400ah.pdf pdf_icon

CJK3401A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 27m@10V30V 32m@4.5V5.8A48m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resist

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Datasheet: CJE3139K , CJFB30H20 , CJK1211 , CJK1508 , CJK2009 , CJK2333 , CJK3400A , CJK3400AH , IRF830 , CJK3401AH , CJK8804 , CJL2013 , CJL2016 , CJL2301 , CJL2623 , CJL8205A , CJM1206 .

History: SI3456BDV

Keywords - CJK3401A MOSFET datasheet

 CJK3401A cross reference
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 CJK3401A substitution
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