CJK3401AH
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJK3401AH
Marking Code: R1H_.R1H
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 4.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.5(max)
nS
Cossⓘ -
Output Capacitance: 127
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SOT23
CJK3401AH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJK3401AH
Datasheet (PDF)
..1. Size:1634K jiangsu
cjk3401ah.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401AH P-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 50m@-10V-30V -4.2A60 m@-4.5Vm@-2.5V85FEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devices Exceptional on-resistance and maximum
6.1. Size:780K jiangsu
cjk3401a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3401A P-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L m@-10V60 -30V 70 m -4.2A@-4.5Vm@-2.5V851. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load Switch for Portable Devi
8.1. Size:715K jiangsu
cjk3400a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400A N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX SOT-23-3L 32m@10V30V 38m@4.5V5.8A45m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-r
8.2. Size:1664K jiangsu
cjk3400ah.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK3400AH N-Channel Enhancement Mode Field Effect TransistorID V(BR)DSS RDS(on)MAX SOT-23-3L 27m@10V30V 32m@4.5V5.8A48m@2.5V1. GATE 2. SOURCE 3. DRAIN DFEATURE APPLICATION High dense cell design for extremely low RDS(ON) Load/Power Switching Exceptional on-resist
8.3. Size:728K jiangsu
cjk3407.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET SOT-23-3L ID V(BR)DSS RDS(on)MAX \60m@-10 V-4.1A-30V 87m@-4.5V1. GATE 2. SOURCE 3. DRAIN DGeneral Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for
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