CJS8810 Datasheet and Replacement. Cross Reference Search

CJS8810 Datasheet (PDF)

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP@4.5V14.2m15.4m@3.8V20V 7A18.2m@2.5V26m@1.8VDESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8804 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP 9.8 4 10.511.1 8A 2 13.3 19.6DESCRIPTION The CJS8804 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This devi

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP Vm@1014@4.5V 16m20V7Am@3.8V1822m@2.5VDESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .