CJS8810 Datasheet and Replacement
Type Designator: CJS8810
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TSSOP8
CJS8810 substitution
CJS8810 Datasheet (PDF)
cjs8810.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP@4.5V14.2m15.4m@3.8V20V 7A18.2m@2.5V26m@1.8VDESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-
cjs8804.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8804 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP 9.8 4 10.511.1 8A 2 13.3 19.6DESCRIPTION The CJS8804 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This devi
cjs8820.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP Vm@1014@4.5V 16m20V7Am@3.8V1822m@2.5VDESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni
Datasheet: CJQ4828 , CJQ6601 , CJQ7328 , CJQ9926 , CJS2013 , CJS2016 , CJS2019 , CJS8804 , IRFZ44 , CJS8820 , CJS9004 , CJT04N15 , CJU20N06 , CJU80N03 , CJX3134K , CJX3139K , CJX3439K .
History: DE375-501N21A
Keywords - CJS8810 MOSFET datasheet
CJS8810 cross reference
CJS8810 equivalent finder
CJS8810 lookup
CJS8810 substitution
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History: DE375-501N21A



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