CJS8810 Specs and Replacement
Type Designator: CJS8810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TSSOP8
CJS8810 substitution
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CJS8810 datasheet
cjs8810.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8810 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP @4.5V 14.2m 15.4m @3.8V 20V 7 A 18.2 m @2.5V 26m @1.8V DESCRIPTION The CJS8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-... See More ⇒
cjs8804.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8804 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on) TYP 9.8 4 10.5 11.1 8A 2 13.3 19.6 DESCRIPTION The CJS8804 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This devi... See More ⇒
cjs8820.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP V m @10 14 @4.5V 16m 20V 7 A m @3.8V 18 22m @2.5V DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni... See More ⇒
Detailed specifications: CJQ4828, CJQ6601, CJQ7328, CJQ9926, CJS2013, CJS2016, CJS2019, CJS8804, IRFZ44, CJS8820, CJS9004, CJT04N15, CJU20N06, CJU80N03, CJX3134K, CJX3139K, CJX3439K
Keywords - CJS8810 MOSFET specs
CJS8810 cross reference
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CJS8810 substitution
CJS8810 replacement
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