All MOSFET. SSH6N70A Datasheet

 

SSH6N70A Datasheet and Replacement


   Type Designator: SSH6N70A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO3P
      - MOSFET Cross-Reference Search

 

SSH6N70A Datasheet (PDF)

 ..1. Size:935K  samsung
 ssh6n70a.pdf pdf_icon

SSH6N70A

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.1. Size:307K  1
 ssh6n55 ssh6n60.pdf pdf_icon

SSH6N70A

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 9.2. Size:946K  samsung
 ssh6n90a.pdf pdf_icon

SSH6N70A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.3. Size:931K  samsung
 ssh6n80as.pdf pdf_icon

SSH6N70A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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History: FQI17P06TU | BUZ84 | IRLR024 | AON6794 | MCP04N60 | CED05N8 | BL10N70-A

Keywords - SSH6N70A MOSFET datasheet

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