2N7002AQ Datasheet and Replacement

2N7002AQN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage 60V 6 @ VGS = 5V 200mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate, 1.2kV HBM This MOSFET is designed to minimize the on-s

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

2N7002AN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Ca

2N7002AFeatures High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-Channel Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFETCompliant. See Ordering Information) Maximum Ratings Operating Junct

2N7002ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. FEATURESEL B LHigh density cell design for low RDS(ON).DIM MILLIMETERSVoltage controolled small signal switch._A +2.93 0.20B 1.30+0.20/-0.15Rugged and reliable.C 1.30 MAX23High saturation current capablity.D 0.45+0.15/-0.05E 2.40+0.3

BR2N7002AK2 Rev.D Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV, HF Product. / Application

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

A2N7002 K SOT-23 N-Channel Enhancement MOSFET3 High Speed Switching ApplicationsESD protected gate2 1.GATELow ON-resistance2.SOURCERDS(on) = 2.8 (typ.) (@VGS = 10 V) 3.DRAIN1RDS(on) = 3.1 (typ.) (@VGS = 5 V) Simplified outline(SOT-23)RDS(on) = 3.2 (typ.) (@VGS = 4.5 V)3 Marking Code:NJ 1 2Equivalent Circuit (top view)Absolute Maximum Ratings

WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi

AP2N7002A 60V N-Channel Enhancement Mode MOSFET Description The AP2N7002A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =0.3A DS DR