DMN2036UCB4 Specs and Replacement
Type Designator: DMN2036UCB4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 278 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: X2-WLB1616-4
- MOSFET ⓘ Cross-Reference Search
DMN2036UCB4 datasheet
..1. Size:425K diodes
dmn2036ucb4.pdf 
DMN2036UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM IS VSSS RSS(ON) Max Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) TA = +25 C Halogen and Antimony Free. Green Device (Note 3) 24V 36m @ VGS = 4.5V 5A Description and Applications Mechanical Data This ... See More ⇒
9.1. Size:469K diodes
dmn2046u.pdf 
DMN2046U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 72m @ VGS = 4.5V 3.4A Low Input/Output Leakage 20V 110m @ VGS = 2.5V 2.7A ESD protected gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal... See More ⇒
9.2. Size:398K diodes
dmn2041ufdb.pdf 
DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 40m @ VGS = 4.5V 4.7A Low Profile, 0.6mm Max Height N-Channel 20V 3.7A 65m @ VGS = 2.5V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An... See More ⇒
9.3. Size:204K diodes
dmn2004vk.pdf 
DMN2004VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Termin... See More ⇒
9.4. Size:275K diodes
dmn2028ufdh.pdf 
DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V... See More ⇒
9.5. Size:297K diodes
dmn2016lhab.pdf 
DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25 C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully ... See More ⇒
9.6. Size:153K diodes
dmn2020lsn.pdf 
DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low ... See More ⇒
9.7. Size:652K diodes
dmn2027lk3.pdf 
A Product Line of Diodes Incorporated DMN2027LK3 20V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS... See More ⇒
9.8. Size:308K diodes
dmn2020ufcl.pdf 
DMN2020UFCL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25 C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall... See More ⇒
9.9. Size:189K diodes
dmn2004k.pdf 
DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec... See More ⇒
9.10. Size:168K diodes
dmn2050l.pdf 
DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 29m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 100m ... See More ⇒
9.11. Size:162K diodes
dmn2005lpk.pdf 
DMN2005LPK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006-3 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections S... See More ⇒
9.12. Size:489K diodes
dmn2015ufde.pdf 
DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Package TA = +25 C Low Gate Threshold Voltage Low On-Resistance 11.6m @ VGS = 4.5V 10.5A U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E ... See More ⇒
9.13. Size:239K diodes
dmn2005k.pdf 
DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020C Low Input/Output Leakage ... See More ⇒
9.14. Size:151K diodes
dmn2040lts.pdf 
DMN2040LTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case TSSOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-S... See More ⇒
9.15. Size:284K diodes
dmn2013ufde.pdf 
DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) MAX Package TA = +25 C PCB footprint of 4mm2 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Complian... See More ⇒
9.16. Size:270K diodes
dmn2013ufx.pdf 
DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 11.5m @ VGS = 4.5V 10 A Low Input/Output Leakage ESD Protected 20V 14m @ VGS = 2.5V 9 A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halog... See More ⇒
9.17. Size:182K diodes
dmn2041lsd.pdf 
DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-0... See More ⇒
9.18. Size:168K diodes
dmn2016uts.pdf 
DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TSSOP-8L Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020... See More ⇒
9.19. Size:178K diodes
dmn2005dlp4k.pdf 
DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed ... See More ⇒
9.20. Size:284K diodes
dmn2004dmk.pdf 
DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Term... See More ⇒
9.21. Size:231K diodes
dmn2050lfdb.pdf 
DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 45m @ VGS = 4.5V 4.5A Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m @ VGS = 2.5V 4.1A Halogen and Antimony Free... See More ⇒
9.22. Size:145K diodes
dmn2009lss.pdf 
DMN2009LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SO-8 8m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 9m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 12m @ VGS = 2.5V Terminals Connections See Diagram ... See More ⇒
9.23. Size:334K diodes
dmn2005ufg.pdf 
DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25 C (t... See More ⇒
9.25. Size:327K diodes
dmn2056u.pdf 
DMN2056U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max BVDSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 38m @ VGS = 4.5V 4.0A Fast Switching Speed 20V 45m @ VGS = 2.5V 3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ... See More ⇒
9.26. Size:223K diodes
dmn2019uts.pdf 
DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 18.5m @ VGS = 10V 5.4 A ESD Protected up to 2KV 21m @ VGS = 4.5V 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m @ VGS = 2.5V 4.6 A Halogen a... See More ⇒
9.27. Size:431K diodes
dmn2009uss.pdf 
DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 8m @ VGS = 10V 12.8A Fast Switching Speed 20V 9m @ VGS = 4.5V 12.1A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m @ VGS ... See More ⇒
9.28. Size:188K diodes
dmn2016lfg.pdf 
DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m... See More ⇒
9.29. Size:278K diodes
dmn2004dwk.pdf 
DMN2004DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Ter... See More ⇒
9.30. Size:172K diodes
dmn2004wk.pdf 
DMN2004WK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020D Fast Switching Speed Terminals Finish ... See More ⇒
9.31. Size:184K diodes
dmn2004tk.pdf 
DMN2004TK N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Finish Matte T... See More ⇒
9.32. Size:197K diodes
dmn2075udw.pdf 
DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Benefit and Features Low On-Resistance Low Input Capacitance ID V(BR)DSS RDS(on) max Fast Switching Speed TA = 25 C Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) 48m @ VGS = 4.5V 2.8A 20V "Green" Device (Note 2) 59m @ VGS = 2.5V 2.6A Qualified to AEC-Q101 ... See More ⇒
9.33. Size:262K diodes
dmn2014lhab.pdf 
DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Gate Threshold Voltage 13m @ VGS = 4.5V 9.0A Low Input Capacitance 14m @ VGS = 4.0V 8.7A Fast Switching Speed 20V 17m @ VGS = 3.1V 8.0A ESD Protected Gate 18m @ VGS = 2.5V 6.7A Totally Lead-Free & Full... See More ⇒
9.34. Size:573K diodes
dmn2023ucb4.pdf 
DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features IS Built-in G-S Protection Diode Against ESD 2kV HBM V(BR)DSS RSS(ON) Package TA = +25 C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24V 26m @ VGS = 4.5V X1-WLB1818-4 6.0A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High R... See More ⇒
9.35. Size:334K diodes
dmn2011ufde.pdf 
DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm Profile Ideal for Low Profile Applications V(BR)DSS RDS(ON) max TA = +25 C PCB Footprint of 4mm2 9.5m @ VGS = 4.5V 11.7A Low Gate Threshold Voltage 20V 11m @ VGS = 2.5V 10.8A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compl... See More ⇒
9.36. Size:153K diodes
dmn2040lsd.pdf 
DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 26m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D ... See More ⇒
9.37. Size:480K diodes
dmn2058u.pdf 
DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) Max ID Max Low Gate Threshold Voltage Low Input Capacitance 4.6A 35m @ VGS = 10V Fast Switching Speed 20V Low Input/Output Leakage 40m @ VGS = 4.5V 4.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen an... See More ⇒
9.38. Size:166K diodes
dmn2005lp4k.pdf 
DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Term... See More ⇒
9.39. Size:159K diodes
dmn2075u.pdf 
DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Lo... See More ⇒
9.40. Size:157K diodes
dmn2041l.pdf 
DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 ... See More ⇒
9.41. Size:307K diodes
dmn2022ufdf.pdf 
DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25 C Low Gate Threshold Voltage 22m @ VGS = 4.5V 7.9A Fast Switching Speed ESD Protected Gate 26m @ VGS = 2.5V 7.2A 20V Totally Lead-Free & Fully RoHS Comp... See More ⇒
9.42. Size:265K diodes
dmn2029usd.pdf 
DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max Package TA = +25 C Low On-Resistance 25m @ VGS = 4.5V 5.8A Fast Switching Speed 20V SO-8 35m @ VGS = 2.5V 4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒
9.43. Size:198K diodes
dmn2065uw.pdf 
DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 56m @ VGS = 4.5V 2.8A Lead Free By Design/RoHS Compliant (Note 1) 65m @ VGS = 2.5V 2.6A "Green" Device (Note 2) 20V Qualified to AEC-Q101 standards for Hi... See More ⇒
9.44. Size:90K tysemi
dmn2020lsn.pdf 
Product specification DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals F... See More ⇒
9.45. Size:152K tysemi
dmn2050l.pdf 
Product specification DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 29m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 100m @VGS = 2.0V Terminal Connections... See More ⇒
9.46. Size:111K tysemi
dmn2075u.pdf 
Product specification DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals ... See More ⇒
9.47. Size:123K tysemi
dmn2041l.pdf 
Product specification DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminal... See More ⇒
Detailed specifications: DMG2305UXQ, DMG3414UQ, DMG7401SFGQ, DMHT6016LFJ, DMN1002UCA6, DMN1003UCA6, DMN1006UCA6, DMN2009USS, IRFP450, DMN2056U, DMN2058U, DMN3009LFVW, DMN3009SK3, DMN3018SSS, DMN3023L, DMN3032LFDB, DMN3110LCP3
Keywords - DMN2036UCB4 MOSFET specs
DMN2036UCB4 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.