DMP10H400SEQ Specs and Replacement
Type Designator: DMP10H400SEQ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.9 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT223
DMP10H400SEQ substitution
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DMP10H400SEQ datasheet
dmp10h400seq.pdf
DMP10H400SEQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Gate Drive BVDSS RDS(ON) Max TA = +25 C Low Input Capacitance Fast Switching Speed 250m @ VGS = -10V -2.3A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 300m @ VGS = -4.5V -2.1A Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒
dmp10h400sk3.pdf
DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance 240m @ VGS = -10V -9A -100V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8A 300m @ VGS = -4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards... See More ⇒
dmp10h400sk3.pdf
isc P-Channel MOSFET Transistor DMP10H400SK3 FEATURES Drain Current I = -9A@ T =25 D C Drain Source Voltage- V = -100V(Min) DSS Static Drain-Source On-Resistance R = 240m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
Detailed specifications: DMN7022LFGQ, DMNH4006SPSQ, DMNH6021SK3Q, DMNH6042SSDQ, DMP1005UFDF, DMP1009UFDF, DMP1055USW, DMP10H400SE, K2611, DMP10H4D2S, DMP1100UCB4, DMP2003UPS, DMP2035UFDF, DMP2045U, DMP2088LCP3, DMP2120U, DMP2123LQ
Keywords - DMP10H400SEQ MOSFET specs
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History: AMS6006 | 2N90G-TM3-T | L2N7002SLT3G | IRLR3714Z | 2SK4123LS
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