All MOSFET. FHD150N03B Datasheet

 

FHD150N03B Datasheet and Replacement


   Type Designator: FHD150N03B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-252
 

 FHD150N03B substitution

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FHD150N03B Datasheet (PDF)

 ..1. Size:763K  feihonltd
 fhd150n03b.pdf pdf_icon

FHD150N03B

N N-CHANNEL MOSFET FHD150N03B MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30 V Crss ( 405pF) Low Crss (typical 405pF ) Rdson-typ @Vgs=10V 2.2m Fast switching Rdson-typ @Vgs=4.5V 2.8m 100% 100% avalanche tested Qg-typ

 5.1. Size:1222K  feihonltd
 fhp150n03a fhs150n03a fhd150n03a.pdf pdf_icon

FHD150N03B

N N-CHANNEL MOSFET FHP150N03A/FHS150N03A/FHD150N03A MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30V Crss ( 314pF) Low Crss (typical 314pF ) Rdson-typ @Vgs=10V 2.5m Fast switching Rdson-typ @Vgs=4.5V 3.2m 100% 100% avalanc

 8.1. Size:116K  china
 fhd150.pdf pdf_icon

FHD150N03B

FHD150 NPN B C D E F G PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 3.0 V

 9.1. Size:243K  feihonltd
 fhd15n10a.pdf pdf_icon

FHD150N03B

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Datasheet: DMP3007SCG , FHA150N06C , FHA20N50A , FHA20N90A , FHA24N50A , FHA28N50A , FHA86N30A , FHA9N90D , IRFZ44 , FHD15N10A , FHD18P10A , FHD80N07C , FHF10N80A , FHF18N50A , FHF18N50C , FHF20N60A , FHP20N60A .

History: CTLM8110-M832D | HSS2306A

Keywords - FHD150N03B MOSFET datasheet

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