All MOSFET. FHU2N60E Datasheet

 

FHU2N60E Datasheet and Replacement


   Type Designator: FHU2N60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-251
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FHU2N60E Datasheet (PDF)

 ..1. Size:978K  feihonltd
 fhf2n60e fhp2n60e fhu2n60e fhd2n60e.pdf pdf_icon

FHU2N60E

N N-CHANNEL MOSFET FHF2N60E/FHP2N60E/FHU2N60E/FHD2N60E MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 600V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 7.1. Size:964K  feihonltd
 fhf2n60a fhp2n60a fhu2n60a fhd2n60a.pdf pdf_icon

FHU2N60E

N N-CHANNEL MOSFET FHF2N60A/FHP2N60A/FHU2N60A/FHD2N60A MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 600V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 3.5 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 8.1. Size:964K  feihonltd
 fhf2n65a fhp2n65a fhu2n65a fhd2n65a.pdf pdf_icon

FHU2N60E

N N-CHANNEL MOSFET FHF2N65A/FHP2N65A/FHU2N65A/FHD2N65A MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

 8.2. Size:979K  feihonltd
 fhp2n65d fhf2n65d fhu2n65d fhd2n65d.pdf pdf_icon

FHU2N60E

N N-CHANNEL MOSFET FHP2N65D/FHF2N65D/FHU2N65D/FHD2N65D MAIN CHARACTERISTICS FEATURES ID 2A Low gate charge VDSS 650V Crss ( 6pF) Low Crss (typical 6pF ) Rdson-typ @Vgs=10V 4.0 Fast switching Qg-typ 8.0nC 100% 100% avalanche tested dv/

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History: DMN2020UFCL | IRLU8743

Keywords - FHU2N60E MOSFET datasheet

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