All MOSFET. FHP10N60A Datasheet

 

FHP10N60A MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP10N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 37.2 nC
   trⓘ - Rise Time: 121 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220

 FHP10N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP10N60A Datasheet (PDF)

 ..1. Size:668K  feihonltd
fhp10n60a fhf10n60a.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFET FHP10N60A/ FHF10N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 23pF) Low Crss (typical 23pF ) VDSS 600V Fast switching Rdson-typ 0.68 @Vgs=10V 100% 100% avalanche tested Qg-typ 45nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATION High efficiency switch mode power su

 7.1. Size:603K  feihonltd
fhp10n65b fhf10n65b.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFET FHP10N65B/FHF10N65B MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.75 @Vgs=10V 100% 100% avalanche tested Qg-typ 30nC dv/dt

 7.2. Size:543K  feihonltd
fhp10n65a fhf10n65a.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFET FHP10N65A/FHF10N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 10A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.8 @Vgs=10V 100% 100% avalanche tested Qg-typ 29nC dv/dt Improved dv/dt capability RoHS RoHS product APPLICATIONHigh efficiency switch mode pow

 9.1. Size:767K  feihonltd
fhu100n03c fhd100n03c fhp100n03c.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

 9.2. Size:1909K  feihonltd
fhp100n07a.pdf

FHP10N60A
FHP10N60A

6 6 90

 9.3. Size:259K  feihonltd
fhp100n08a.pdf

FHP10N60A
FHP10N60A

 9.4. Size:757K  feihonltd
fhu100n03b fhd100n03b fhp100n03b.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

 9.5. Size:1017K  feihonltd
fhp100n03a.pdf

FHP10N60A
FHP10N60A

N N-CHANNEL MOSFETFHP100N03A 2 1

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDN304P-NL | SVD3205S

 

 
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