All MOSFET. SSH8N90A Datasheet

 

SSH8N90A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSH8N90A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 240 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 2070 pF

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO3P

SSH8N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSH8N90A Datasheet (PDF)

1.1. ssh8n90a.pdf Size:937K _samsung

SSH8N90A
SSH8N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.1. ssh8n80a.pdf Size:935K _samsung

SSH8N90A
SSH8N90A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

Datasheet: SSH70N10A , SSH7N60A , SSH7N80A , SSH7N90A , SSH80N06A , SSH8N55 , SSH8N60 , SSH8N80A , IRFZ24N , SSH9N80A , SSH9N90A , SSI1N50A , SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A .

 


SSH8N90A
  SSH8N90A
  SSH8N90A
 

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