All MOSFET. FHP120N08D Datasheet

 

FHP120N08D MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP120N08D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 40 nS
   Drain-Source Capacitance (Cd): 500 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO-220

 FHP120N08D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP120N08D Datasheet (PDF)

 ..1. Size:802K  feihonltd
fhp120n08d.pdf

FHP120N08D FHP120N08D

N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve

 9.1. Size:158K  1
fhp12n60.pdf

FHP120N08D FHP120N08D

FHP12N60FHP12N60 N MOSAC-DCDC-DCHPMW 12A,600V,RDS(on)(0.6 TC=25 VDS

 9.2. Size:784K  feihonltd
fhp12n60a fhf12n60a.pdf

FHP120N08D FHP120N08D

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

 9.3. Size:782K  feihonltd
fhp12n65c fhf12n65c.pdf

FHP120N08D FHP120N08D

N N-CHANNEL MOSFET FHP12N65C/ FHF12N65C MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.63 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt I

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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