All MOSFET. FHP130N10A Datasheet

 

FHP130N10A Datasheet and Replacement


   Type Designator: FHP130N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-220
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FHP130N10A Datasheet (PDF)

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FHP130N10A

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 fhp13007a.pdf pdf_icon

FHP130N10A

TRANSISTOR FHP13007A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas

 9.1. Size:1075K  feihonltd
 fhp13n50a fhf13n50a.pdf pdf_icon

FHP130N10A

N N-CHANNEL MOSFET FHP13N50A/FHF13N50A MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.34 Fast switching Qg-typ 45nC 100% 100% avalanche tested dv/dt Imp

 9.2. Size:971K  feihonltd
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FHP130N10A

N N-CHANNEL MOSFET FHP13N50C/FHF13N50C MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 0.4 Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt Impr

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Keywords - FHP130N10A MOSFET datasheet

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