FHF13N50A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHF13N50A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 210 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220F
FHF13N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHF13N50A Datasheet (PDF)
fhp13n50a fhf13n50a.pdf
N N-CHANNEL MOSFET FHP13N50A/FHF13N50A MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.34 Fast switching Qg-typ 45nC 100% 100% avalanche tested dv/dt Imp
fhp13n50c fhf13n50c.pdf
N N-CHANNEL MOSFET FHP13N50C/FHF13N50C MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 0.4 Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt Impr
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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