FHP15N65A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP15N65A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 183 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-220
FHP15N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP15N65A Datasheet (PDF)
fhp15n65a fhf15n65a.pdf
N N-CHANNEL MOSFET FHP15N65A /FHF15N65A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 650V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.46 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
fhp15n60a fhf15n60a.pdf
N N-CHANNEL MOSFET FHP15N60A /FHF15N60A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 600V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.41 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
fhp150n03a fhs150n03a fhd150n03a.pdf
N N-CHANNEL MOSFET FHP150N03A/FHS150N03A/FHD150N03A MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 30V Crss ( 314pF) Low Crss (typical 314pF ) Rdson-typ @Vgs=10V 2.5m Fast switching Rdson-typ @Vgs=4.5V 3.2m 100% 100% avalanc
fhp150n03c.pdf
N N-CHANNEL MOSFET FHP150N03C MAIN CHARACTERISTICS FEATURES ID 150 A Low gate charge VDSS 26 V Crss ( 405pF) Low Crss (typical 405pF ) Rdson-typ @Vgs=10V 2.2m Fast switching Rdson-typ @Vgs=4.5V 2.8m 100% 100% avalanche tested Qg-typ
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