SSI1N50A PDF and Equivalents Search

 

SSI1N50A Specs and Replacement

Type Designator: SSI1N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: I2PAK

SSI1N50A substitution

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SSI1N50A datasheet

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SSI1N50A

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Detailed specifications: SSH7N90A, SSH80N06A, SSH8N55, SSH8N60, SSH8N80A, SSH8N90A, SSH9N80A, SSH9N90A, AO4407, SSI1N60A, SSI2N60A, SSI2N80A, SSI2N90A, SSI3N80A, SSI3N90A, SSI4N60A, SSI4N80A

Keywords - SSI1N50A MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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