FHP3205C Datasheet and Replacement
Type Designator: FHP3205C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-220
FHP3205C substitution
FHP3205C Datasheet (PDF)
fhp3205c.pdf
N N-CHANNEL MOSFET FHP3205C MAIN CHARACTERISTICS FEATURES ID 110 A Low gate charge VDSS 55 V Crss ( 211pF) Low Crss (typical 211pF ) Rdson-typ @Vgs=10V 7.2 m Fast switching Qg-typ 146nC 100% 100% avalanche tested dv/dt Improved
fhp3205.pdf
3205Featuresproduct description 110A, 55V, RDS(on) = 8.0m fast switching FHP3205 is a low-voltage high-current power MOS field effect transistor, speedwidely used in power invertersAvailableRoHS*?COMPLIANTLimit value (TC=25)parameter name symbol unitParameter valueVDrain-source voltage 55V DSV DSDrain current @Tc=25 110 AI DI DV GSGate-source
Datasheet: FHF15N65A , FHP20N40A , FHP20N50A , FHF20N50A , FHP2N65D , FHF2N65D , FHU2N65D , FHD2N65D , 8N60 , FHP3710C , FHP40N20A , FHP40N20C , FHP4410A , FHP50N06 , FHU50N06D , FHD50N06D , FHP50N06A .
History: FHF8N80B | FHP110N8F5A
Keywords - FHP3205C MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: FHF8N80B | FHP110N8F5A
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