FHP50N06 MOSFET. Datasheet pdf. Equivalent

   Type Designator: FHP50N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220

FHP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FHP50N06 Datasheet (PDF)

..1. Size:738K feihonltd
fhp50n06 fhu50n06d fhd50n06d.pdf

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

0.1. Size:374K feihonltd
fhp50n06c.pdf