FHP7N65G MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP7N65G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO-220
FHP7N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP7N65G Datasheet (PDF)
fhp7n65g.pdf
N N-CHANNEL MOSFET FHP7N65G MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Improved dv/dt
fhu7n65b fhd7n65b fhp7n65b fhf7n65b.pdf
N N-CHANNEL MOSFET FHU7N65B/FHD7N65B /FHP7N65B /FHF7N65B MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.2 Fast switching Qg-typ 24nC 100% 100% avalanche tested
fhp7n65a fhf7n65a.pdf
N N-CHANNEL MOSFET FHP7N65A /FHF7N65A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr
fhp7n60a fhf7n60a.pdf
N N-CHANNEL MOSFET FHP7N60A /FHF7N60A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 600V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
