FHP80N07A MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP80N07A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 73 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO-220
FHP80N07A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP80N07A Datasheet (PDF)
6.1. Size:857K feihonltd
fhp80n07b.pdf
fhp80n07b.pdf
N N-CHANNEL MOSFET FHP80N07B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d
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