All MOSFET. FHP8N60C Datasheet

 

FHP8N60C MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP8N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220

 FHP8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP8N60C Datasheet (PDF)

 ..1. Size:995K  feihonltd
 fhp8n60c fhf8n60c.pdf

FHP8N60C FHP8N60C

N N-CHANNEL MOSFET FHP8N60C /FHF8N60C MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 12pF) Low Crss (typical 12pF ) Rdson-typ @Vgs=10V 1.1 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improv

 7.1. Size:811K  feihonltd
 fhp8n60a fhf8n60a.pdf

FHP8N60C FHP8N60C

N N-CHANNEL MOSFET FHP8N60A /FHF8N60A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 15pF) Low Crss (typical 15pF ) Rdson-typ@Vgs=10V 0.9 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improved dv/dt

 8.1. Size:970K  feihonltd
 fhp8n65a fhf8n65a.pdf

FHP8N60C FHP8N60C

N N-CHANNEL MOSFET FHP8N65A /FHF8N65A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AONL32328 | SML802R4BN

 

 
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