FHF8N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: FHF8N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220F
FHF8N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHF8N60C Datasheet (PDF)
fhp8n60c fhf8n60c.pdf
N N-CHANNEL MOSFET FHP8N60C /FHF8N60C MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 12pF) Low Crss (typical 12pF ) Rdson-typ @Vgs=10V 1.1 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improv
fhp8n60a fhf8n60a.pdf
N N-CHANNEL MOSFET FHP8N60A /FHF8N60A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 600V Crss ( 15pF) Low Crss (typical 15pF ) Rdson-typ@Vgs=10V 0.9 Fast switching Qg-typ 29nC 100% 100% avalanche tested dv/dt Improved dv/dt
fhp8n65a fhf8n65a.pdf
N N-CHANNEL MOSFET FHP8N65A /FHF8N65A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr
fhf8n80b.pdf
N N-CHANNEL MOSFET FHF8N80B MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 800V Crss ( 14pF) Low Crss (typical 14pF ) Rdson-typ @Vgs=10V 1.25 Fast switching Qg-typ 49nC 100% 100% avalanche tested dv/dt Improved dv/dt
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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