SSI2N90A PDF and Equivalents Search

 

SSI2N90A Specs and Replacement

Type Designator: SSI2N90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: I2PAK

SSI2N90A substitution

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SSI2N90A datasheet

 ..1. Size:204K  1
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SSI2N90A

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SSI2N90A

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 9.2. Size:218K  1
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 9.3. Size:647K  fairchild semi
 ssi2n60b ssi2n60b ssw2n60b.pdf pdf_icon

SSI2N90A

November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored ... See More ⇒

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Detailed specifications: SSH8N80A, SSH8N90A, SSH9N80A, SSH9N90A, SSI1N50A, SSI1N60A, SSI2N60A, SSI2N80A, IRF1407, SSI3N80A, SSI3N90A, SSI4N60A, SSI4N80A, SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A

Keywords - SSI2N90A MOSFET specs

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