FHD100N03B MOSFET. Datasheet pdf. Equivalent
Type Designator: FHD100N03B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 44.6 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.7 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20.7 nC
Rise Time (tr): 12.2 nS
Drain-Source Capacitance (Cd): 132 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0056 Ohm
Package: TO-252
FHD100N03B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHD100N03B Datasheet (PDF)
fhu100n03b fhd100n03b fhp100n03b.pdf
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N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala
fhu100n03c fhd100n03c fhp100n03c.pdf
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N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala
fhd100.pdf
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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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