FHU120N03C Specs and Replacement
Type Designator: FHU120N03C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-251
FHU120N03C substitution
- MOSFET ⓘ Cross-Reference Search
FHU120N03C datasheet
fhu120n03c fhd120n03c.pdf
N N-CHANNEL MOSFET FHU120N03C/FHD120N03C MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 30 V Crss ( 120pF) Low Crss (typical 120pF ) Rdson-typ @Vgs=10V 3.0m Fast switching Rdson-typ @Vgs=4.5V 3.7m 100% 100% avalanche teste... See More ⇒
Detailed specifications: FHU100N03A, FHD100N03A, FHU100N03B, FHD100N03B, FHP100N03B, FHU100N03C, FHD100N03C, FHP100N03C, 2SK3878, FHD120N03C, FHU4N60A, FHP4N60A, FHD4N60A, FHF4N60A, FHU4N65A, FHP4N65A, FHD4N65A
Keywords - FHU120N03C MOSFET specs
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