FHD4N60A Specs and Replacement
Type Designator: FHD4N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO-252
FHD4N60A substitution
- MOSFET ⓘ Cross-Reference Search
FHD4N60A datasheet
fhu4n60a fhp4n60a fhd4n60a fhf4n60a.pdf
N N-CHANNEL MOSFET FHU4N60A/FHP4N60A/FHD4N60A/FHF4N60A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf
N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf
N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒
Detailed specifications: FHP100N03B, FHU100N03C, FHD100N03C, FHP100N03C, FHU120N03C, FHD120N03C, FHU4N60A, FHP4N60A, IRF4905, FHF4N60A, FHU4N65A, FHP4N65A, FHD4N65A, FHF4N65A, FHU4N65B, FHP4N65B, FHD4N65B
Keywords - FHD4N60A MOSFET specs
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