All MOSFET. FHP4N65A Datasheet

 

FHP4N65A Datasheet and Replacement


   Type Designator: FHP4N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO-220
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FHP4N65A Datasheet (PDF)

 ..1. Size:1195K  feihonltd
 fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf pdf_icon

FHP4N65A

N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 7.1. Size:1197K  feihonltd
 fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf pdf_icon

FHP4N65A

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 7.2. Size:1084K  feihonltd
 fhu4n65b fhp4n65b fhd4n65b fhf4n65b.pdf pdf_icon

FHP4N65A

N N-CHANNEL MOSFET FHU4N65B/FHP4N65B/FHD4N65B/FHF4N65B MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

 7.3. Size:1331K  feihonltd
 fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf pdf_icon

FHP4N65A

N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv

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History: VBNC1303 | IRFS4010PBF

Keywords - FHP4N65A MOSFET datasheet

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