FHF4N65D PDF and Equivalents Search

 

FHF4N65D Specs and Replacement

Type Designator: FHF4N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220F

FHF4N65D substitution

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FHF4N65D datasheet

 ..1. Size:1197K  feihonltd
 fhu4n65d fhd4n65d fhp4n65d fhf4n65d.pdf pdf_icon

FHF4N65D

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒

 7.1. Size:1084K  feihonltd
 fhu4n65b fhp4n65b fhd4n65b fhf4n65b.pdf pdf_icon

FHF4N65D

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 7.2. Size:1195K  feihonltd
 fhu4n65a fhp4n65a fhd4n65a fhf4n65a.pdf pdf_icon

FHF4N65D

N N-CHANNEL MOSFET FHU4N65A/FHP4N65A/FHD4N65A/FHF4N65A MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.9 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested ... See More ⇒

 7.3. Size:1331K  feihonltd
 fhu4n65e fhd4n65e fhp4n65e fhf4n65e.pdf pdf_icon

FHF4N65D

N N-CHANNEL MOSFET FHU4N65E/FHD4N65E/FHP4N65E/FHF4N65E MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650 V Crss ( 4.5pF) Low Crss (typical 4.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 18nC 100% 100% avalanche tested dv... See More ⇒

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Detailed specifications: FHF4N65A, FHU4N65B, FHP4N65B, FHD4N65B, FHF4N65B, FHU4N65D, FHD4N65D, FHP4N65D, IRF1010E, FHU4N65E, FHD4N65E, FHP4N65E, FHF4N65E, FHU50N06A, FHD50N06A, FHU540A, FHD540A

Keywords - FHF4N65D MOSFET specs

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