SSI4N80AS PDF and Equivalents Search

 

SSI4N80AS Specs and Replacement

Type Designator: SSI4N80AS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: I2PAK

SSI4N80AS substitution

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SSI4N80AS datasheet

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Detailed specifications: SSI1N60A, SSI2N60A, SSI2N80A, SSI2N90A, SSI3N80A, SSI3N90A, SSI4N60A, SSI4N80A, SI2302, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, SSP1N50A

Keywords - SSI4N80AS MOSFET specs

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