SSI4N80AS MOSFET. Datasheet pdf. Equivalent
Type Designator: SSI4N80AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 90 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: I2PAK
SSI4N80AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSI4N80AS Datasheet (PDF)
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
Datasheet: SSI1N60A , SSI2N60A , SSI2N80A , SSI2N90A , SSI3N80A , SSI3N90A , SSI4N60A , SSI4N80A , 7N60 , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , SSI7N60A , SSP10N60A , SSP1N50A .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918