All MOSFET. FHU5N65B Datasheet

 

FHU5N65B MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHU5N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-251

 FHU5N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHU5N65B Datasheet (PDF)

 ..1. Size:1011K  feihonltd
 fhu5n65b fhd5n65b fhp5n65b fhf5n65b.pdf

FHU5N65B FHU5N65B

N N-CHANNEL MOSFET FHU5N65B/FHD5N65B/FHP5N65B/FHF5N65B MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested

 7.1. Size:1011K  feihonltd
 fhu5n65c fhd5n65c fhp5n65c fhf5n65c.pdf

FHU5N65B FHU5N65B

N N-CHANNEL MOSFET FHU5N65C/FHD5N65C/FHP5N65C/FHF5N65C MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested

 8.1. Size:1179K  feihonltd
 fhu5n60a fhd5n60a fhp5n60a fhf5n60a.pdf

FHU5N65B FHU5N65B

N N-CHANNEL MOSFET FHU5N60A/FHD5N60A /FHP5N60A /FHF5N60A MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: F5001H

 

 
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