All MOSFET. FHD5N65B Datasheet

 

FHD5N65B MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHD5N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-252

 FHD5N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHD5N65B Datasheet (PDF)

 ..1. Size:1011K  feihonltd
 fhu5n65b fhd5n65b fhp5n65b fhf5n65b.pdf

FHD5N65B FHD5N65B

N N-CHANNEL MOSFET FHU5N65B/FHD5N65B/FHP5N65B/FHF5N65B MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested

 7.1. Size:1011K  feihonltd
 fhu5n65c fhd5n65c fhp5n65c fhf5n65c.pdf

FHD5N65B FHD5N65B

N N-CHANNEL MOSFET FHU5N65C/FHD5N65C/FHP5N65C/FHF5N65C MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested

 8.1. Size:1179K  feihonltd
 fhu5n60a fhd5n60a fhp5n60a fhf5n60a.pdf

FHD5N65B FHD5N65B

N N-CHANNEL MOSFET FHU5N60A/FHD5N60A /FHP5N60A /FHF5N60A MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 600V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 1.7 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RJK0631JPD | SSF7N80A | MTB30N06Q8 | STP130NH02L | SSA50R240S | HSU60N02 | HTD070N04

 

 
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