All MOSFET. FHD7N65B Datasheet

 

FHD7N65B Datasheet and Replacement


   Type Designator: FHD7N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-252
 

 FHD7N65B substitution

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FHD7N65B Datasheet (PDF)

 ..1. Size:1075K  feihonltd
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FHD7N65B

N N-CHANNEL MOSFET FHU7N65B/FHD7N65B /FHP7N65B /FHF7N65B MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.2 Fast switching Qg-typ 24nC 100% 100% avalanche tested

Datasheet: FHF5N65C , FHU630A , FHD630A , FHP630A , FHF630A , FHU70N03A , FHD70N03A , FHU7N65B , IRFB31N20D , FHP7N65B , FHF7N65B , FHU9540C , FHD9540C , BR13N50 , BR20N40 , BR2N7002K2 , BR40P03 .

History: BRD3N80

Keywords - FHD7N65B MOSFET datasheet

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