All MOSFET. FHD7N65B Datasheet

 

FHD7N65B MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHD7N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-252

 FHD7N65B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHD7N65B Datasheet (PDF)

 ..1. Size:1075K  feihonltd
 fhu7n65b fhd7n65b fhp7n65b fhf7n65b.pdf

FHD7N65B FHD7N65B

N N-CHANNEL MOSFET FHU7N65B/FHD7N65B /FHP7N65B /FHF7N65B MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.2 Fast switching Qg-typ 24nC 100% 100% avalanche tested

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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