SSP1N50A MOSFET Datasheet: N-Ch, 500V, 1.5A. Full specification with pinout and replacement list

SSP1N50A Specs and Replacement

Type Designator: SSP1N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO220

SSP1N50A substitution

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SSP1N50A datasheet

..1. Size:942K samsung
ssp1n50a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 4.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

9.1. Size:931K samsung
ssp1n60a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 9.390 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value U... See More ⇒

Detailed specifications: SSI4N80AS, SSI4N90A, SSI4N90AS, SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, 2N60, SSP1N60A, SSP2N60A, SSP2N80A, SSP2N90A, SSP3N70, SSP3N70A, SSP3N80A, SSP3N90A