All MOSFET. SSP1N50A Datasheet

 

SSP1N50A Datasheet and Replacement


   Type Designator: SSP1N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO220
 

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SSP1N50A Datasheet (PDF)

 ..1. Size:942K  samsung
 ssp1n50a.pdf pdf_icon

SSP1N50A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 9.1. Size:931K  samsung
 ssp1n60a.pdf pdf_icon

SSP1N50A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value U

Datasheet: SSI4N80AS , SSI4N90A , SSI4N90AS , SSI5N80A , SSI5N90A , SSI6N70A , SSI7N60A , SSP10N60A , MMD60R360PRH , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , SSP3N70A , SSP3N80A , SSP3N90A .

History: BSC032N03SG

Keywords - SSP1N50A MOSFET datasheet

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