SSP2N80A MOSFET Datasheet: N-Ch, 800V, 2A. Full specification with pinout and replacement list

SSP2N80A Specs and Replacement

Type Designator: SSP2N80A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO220

SSP2N80A substitution

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SSP2N80A datasheet

..1. Size:931K samsung
ssp2n80a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un... See More ⇒

9.1. Size:862K fairchild semi
ssp2n60b sss2n60b.pdf pdf_icon

SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12.5 nC) planar, DMOS technology. Low Crss ( typical 7.6 pF) This advanced technology has been especially tailored to Fast swit... See More ⇒

9.2. Size:939K samsung
ssp2n60a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 3.892 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

9.3. Size:934K samsung
ssp2n90a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 5.838 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

Detailed specifications: SSI5N80A, SSI5N90A, SSI6N70A, SSI7N60A, SSP10N60A, SSP1N50A, SSP1N60A, SSP2N60A, 75N75, SSP2N90A, SSP3N70, SSP3N70A, SSP3N80A, SSP3N90A, SSP45N20A, SSP4N55, SSP4N60