SSP2N90A Datasheet and Replacement. Cross Reference Search

SSP2N90A Datasheet (PDF)

..1. Size:934K samsung
ssp2n90a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 7.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 5.838 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.1. Size:862K fairchild semi
ssp2n60b sss2n60b.pdf pdf_icon

SSP2N60B/SSS2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored to Fast swit

9.2. Size:931K samsung
ssp2n80a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value Un

9.3. Size:939K samsung
ssp2n60a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

Datasheet: SSI5N90A , SSI6N70A , SSI7N60A , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , RU6888R , SSP3N70 , SSP3N70A , SSP3N80A , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS .