G5N50K Specs and Replacement
Type Designator: G5N50K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 58.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
G5N50K substitution
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G5N50K datasheet
g5n50t g5n50f g5n50j g5n50k.pdf
G5N50K GOFORD Description 500V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Application Features R DS(ON)(Max) I VDSS D .@ VGS = 10V DC Motor Control and Class D Amplifier 500V 5A Uninterruptible Power Supply (UPS) 1.4 Fast switching HID 100% avalanche tested Improved dv/dt capability RoHS Compliant & Halogen-Free Package Ordering Informa... See More ⇒
lnc5n50 lnd5n50 lng5n50 lnh5n50.pdf
LNC5N50 LND5N50 LNG5N50 LNH5N50 Lonten N-channel 500V, 5A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 500V DSS advanced planar VDMOS technology. The I 5A D resulting device has low conduction resistance, R 1.6 DS(on),max superior switching performance and high avalanche Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate charge... See More ⇒
Detailed specifications: G33N03D3 , G48N03D3 , G4N60K , G50N03A , G50N03K , G5N50T , G5N50F , G5N50J , STP65NF06 , G6P06 , G7P03L , G86N06K , G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K .
Keywords - G5N50K MOSFET specs
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