GC11N65K Datasheet and Replacement
Type Designator: GC11N65K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO-252
GC11N65K substitution
GC11N65K Datasheet (PDF)
gc11n65t gc11n65f gc11n65k.pdf

GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F
gc11n70k gc11n70t gc11n70f.pdf

GOFORD GC11N70 Description RDS (ON ) The GC11N70 uses advanced super junction technology and VDSID @ (max) 10V design to provide excellent R and low gate charge. This DS(ON)device is suitable for industry AC-DC SMPS requirement of 11 700V 395m A PFC, AC/DC power conversion, and other industrial power application. General Features New technology for high
Datasheet: G5N50J , G5N50K , G6P06 , G7P03L , G86N06K , G90N04 , GC11N65T , GC11N65F , MMD60R360PRH , GC11N70K , GC11N70T , GC11N70F , GT045N10M , GT045N10T , GT045N10D5 , GT060N10T , GT060N10M .
History: SI2308CDS | NTTFS4939N | SRT10N120LD1 | F5V90HVX2 | AP09N70R-H | OSG65R650P | AOD607
Keywords - GC11N65K MOSFET datasheet
GC11N65K cross reference
GC11N65K equivalent finder
GC11N65K lookup
GC11N65K substitution
GC11N65K replacement
History: SI2308CDS | NTTFS4939N | SRT10N120LD1 | F5V90HVX2 | AP09N70R-H | OSG65R650P | AOD607



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