GT045N10T Datasheet and Replacement
Type Designator: GT045N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 792 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
GT045N10T substitution
GT045N10T Datasheet (PDF)
gt045n10m gt045n10t.pdf
GOFORDGT045N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
Datasheet: G90N04 , GC11N65T , GC11N65F , GC11N65K , GC11N70K , GC11N70T , GC11N70F , GT045N10M , MMD60R360PRH , GT045N10D5 , GT060N10T , GT060N10M , GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T .
History: APT4080BN | 25N10G-TM3-T
Keywords - GT045N10T MOSFET datasheet
GT045N10T cross reference
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History: APT4080BN | 25N10G-TM3-T
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