GT045N10T MOSFET. Datasheet pdf. Equivalent
Type Designator: GT045N10T
Marking Code: GT045N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 156 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 130 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 101.6 nC
Rise Time (tr): 7.5 nS
Drain-Source Capacitance (Cd): 792 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
Package: TO-220
GT045N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT045N10T Datasheet (PDF)
gt045n10m gt045n10t.pdf
GOFORDGT045N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 130A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
gt045n10d5.pdf
GOFORDGT045N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ina wide variety of applications.Schematic DiagramGeneral Features VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
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