All MOSFET. SSP3N70A Datasheet

 

SSP3N70A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSP3N70A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220

 SSP3N70A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSP3N70A Datasheet (PDF)

 7.1. Size:305K  1
 ssh3n70 ssp3n70.pdf

SSP3N70A SSP3N70A

 9.1. Size:260K  fairchild semi
 ssp3n90.pdf

SSP3N70A SSP3N70A

SSP3N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 9.2. Size:937K  samsung
 ssp3n80a.pdf

SSP3N70A SSP3N70A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.800 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.3. Size:936K  samsung
 ssp3n90a.pdf

SSP3N70A SSP3N70A

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 6.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.679 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: SSI7N60A , SSP10N60A , SSP1N50A , SSP1N60A , SSP2N60A , SSP2N80A , SSP2N90A , SSP3N70 , IRF1405 , SSP3N80A , SSP3N90A , SSP45N20A , SSP4N55 , SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A .

 

 
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