All MOSFET. DMP3017SFGQ Datasheet

 

DMP3017SFGQ Datasheet and Replacement


   Type Designator: DMP3017SFGQ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15.4 nS
   Cossⓘ - Output Capacitance: 352 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: POWERDI3333-8
 

 DMP3017SFGQ substitution

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DMP3017SFGQ Datasheet (PDF)

 ..1. Size:442K  diodes
dmp3017sfgq.pdf pdf_icon

DMP3017SFGQ

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

 4.1. Size:243K  diodes
dmp3017sfg.pdf pdf_icon

DMP3017SFGQ

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

 5.1. Size:515K  1
dmp3017sfv-7.pdf pdf_icon

DMP3017SFGQ

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V

 5.2. Size:584K  diodes
dmp3017sfk.pdf pdf_icon

DMP3017SFGQ

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

Datasheet: GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 , DMP3007SPS , DMP3013SFV , 10N60 , DMP3036SFV , DMP3098LQ , DMP3125L , DMP32D5SFB , DMP4013LFGQ , DMP4065SQ , DMP510DL , DMP6050SFG .

History: FTK2N65P

Keywords - DMP3017SFGQ MOSFET datasheet

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