DMP6180SK3Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP6180SK3Q
Marking Code: P618SK
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.1
nC
trⓘ - Rise Time: 21.2
nS
Cossⓘ -
Output Capacitance: 58
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
TO252
DMP6180SK3Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP6180SK3Q
Datasheet (PDF)
..1. Size:435K diodes
dmp6180sk3q.pdf
DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand
4.1. Size:188K diodes
dmp6180sk3.pdf
DMP6180SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand
4.2. Size:254K inchange semiconductor
dmp6180sk3-13.pdf
isc P-Channel MOSFET Transistor DMP6180SK3-13FEATURESStatic drain-source on-resistance:RDS(on)110m(@V = -10V; I = -12A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Management FunctionsDC / DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)
4.3. Size:266K inchange semiconductor
dmp6180sk3.pdf
isc P-Channel MOSFET Transistor DMP6180SK3FEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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