DMT4011LFG
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMT4011LFG
Marking Code: T41
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 15.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15.1
nC
trⓘ - Rise Time: 5.8
nS
Cossⓘ -
Output Capacitance: 238
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115
Ohm
Package:
POWERDI3333-8
DMT4011LFG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMT4011LFG
Datasheet (PDF)
..1. Size:449K diodes
dmt4011lfg.pdf 
DMT4011LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Ensures On State Losses Are Minimized ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 11.5m @ VGS = 10V 30A Density
9.1. Size:616K diodes
dmt40m9lps.pdf
DMT40M9LPSGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) Max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 0.9m @ VGS = 10V 304A Low RDS(ON)
9.2. Size:399K diodes
dmt4002lps.pdf
DMT4002LPS Green40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable ID and Robust End Application BVDSS RDS(ON) max TC = +25C Thermally Efficient Package-Cooler Running Applications (Note 9) High Conversion Efficiency 1.8m @ VGS = 10V 100A Low RDS(ON) Minimizes
9.3. Size:436K diodes
dmt4003sct.pdf
DMT4003SCT Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production ID BVDSS RDS(ON) Ensures More Reliable and Robust End Application TC = +25C Low Input Capacitance 40V 3m @VGS = 10V 205A High BVDSS Rating for Power Application Low Input/Output Leakage Lead-Free Finis
9.4. Size:264K diodes
dmt4005sct.pdf
DMT4005SCT 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switching ensures more reliable and robust end application ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Low Input/Output Leakage 40V 4.7m @ VGS = 10V 100A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre
9.5. Size:261K inchange semiconductor
dmt4003sct.pdf
isc N-Channel MOSFET Transistor DMT4003SCTFEATURESDrain Current I = 205A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
9.6. Size:260K inchange semiconductor
dmt4005sct.pdf
isc N-Channel MOSFET Transistor DMT4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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