DMTH6010LK3 PDF and Equivalents Search

 

DMTH6010LK3 Specs and Replacement

Type Designator: DMTH6010LK3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 746 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO252

DMTH6010LK3 substitution

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DMTH6010LK3 datasheet

 ..1. Size:539K  diodes
dmth6010lk3.pdf pdf_icon

DMTH6010LK3

Green DMTH6010LK3 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25 C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi... See More ⇒

 5.1. Size:536K  1
dmth6010lpsq-13.pdf pdf_icon

DMTH6010LK3

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 5.2. Size:536K  diodes
dmth6010lpsq.pdf pdf_icon

DMTH6010LK3

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 6.1. Size:477K  diodes
dmth6010sct.pdf pdf_icon

DMTH6010LK3

DMTH6010SCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25 C Environments 60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Lea... See More ⇒

Detailed specifications: DMTH4007LK3, DMTH4007LPS, DMTH6002LPS, DMTH6004SK3, DMTH6004SK3Q, DMTH6005LK3Q, DMTH6009LK3, DMTH6009LK3Q, IRF520, DMTH6010LPSQ, DMTH6016LSD, DMTH8003SPS, DMTH8012LPSW, ZXMP10A13FQ, ZXMS6005DGQ-13, 19N20, DMG10N60SCT

Keywords - DMTH6010LK3 MOSFET specs

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