All MOSFET. DMTH8012LPSW Datasheet

 

DMTH8012LPSW Datasheet and Replacement


   Type Designator: DMTH8012LPSW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: POWERDI5060-8
 

 DMTH8012LPSW substitution

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DMTH8012LPSW Datasheet (PDF)

 ..1. Size:519K  diodes
 dmth8012lpsw.pdf pdf_icon

DMTH8012LPSW

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 0.1. Size:519K  1
 dmth8012lpsw-13.pdf pdf_icon

DMTH8012LPSW

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 5.1. Size:550K  diodes
 dmth8012lk3.pdf pdf_icon

DMTH8012LPSW

Green DMTH8012LK3 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID max BVDSS RDS(ON) max TC = +25 environments C Low RDS(ON) ensures on state losses are minimized 16m @ VGS = 10V 50A High Conversion Efficiency 80V Low Input Capacitance 21m @ VGS = 4.5V 43A

 8.1. Size:499K  1
 dmth8003sps-13.pdf pdf_icon

DMTH8012LPSW

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

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Datasheet: DMTH6004SK3Q , DMTH6005LK3Q , DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , DMTH6016LSD , DMTH8003SPS , IRF830 , ZXMP10A13FQ , ZXMS6005DGQ-13 , 19N20 , DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT , DMG4N60SJ3 , DMG4N60SK3 .

History: SI4500BDY | 2SK578 | IXTT28N50Q | GSM6424 | NCE70N900I | CS5N65A3 | TPCA8008-H

Keywords - DMTH8012LPSW MOSFET datasheet

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