DMTH8012LPSW MOSFET Datasheet: N-Ch, 80V, 53.7A. Full specification with pinout and replacement list

DMTH8012LPSW Specs and Replacement

Type Designator: DMTH8012LPSW

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 177 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: POWERDI5060-8

DMTH8012LPSW substitution

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DMTH8012LPSW datasheet

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Green DMTH8012LPSW 80V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli... See More ⇒

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DMTH8003SPS Green 80V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V... See More ⇒